The AT45DBD is a volt, dual-interface sequential access Flash memory ideally suited for a wide variety . CNU = 8-lead, 6 x 8 mm CASON. T = lead. AT45DBD-CNU datasheet, AT45DBD-CNU circuit, AT45DBD-CNU data sheet: ATMEL – megabit volt Dual-interface DataFlash,alldatasheet, . AT45DBD-CNU – Flash Memory, Serial NOR, 64 Mbit, Pages x. Add to compare. Image is for Technical Datasheet: AT45DBD-CNU Datasheet.

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Manufacturer ID codes that are two, three or even four bytes long with the first byte s in the sequence being 7FH.

Sector Lockdown com- mand if necessary. Main Memory Page Read Opcode: Deep Power-down, the device will return to the normal standby mode. Page 21 Figure Page 13 Software Sector Protection 8.

AT45DBD-CNU Datasheet(PDF) – ATMEL Corporation

Use Block Erase opcode 50H alternative. Please contact Atmel for the estimated availability of devices with the fix. PUW Changed t from max To enable the sector protection using the Auto Page Rewrite Group C commands consist of: VCSL Changed t from max. Read Operations The following block diagram and waveforms illustrate the various read sequences available. Download datasheet 2Mb Share this page. The shipping carrier option is not marked on the devices.


The algorithm will be repeated sequentially for each eatasheet within the entire array. Software Sector Protection 8.

Reading the Sector Lockdown Register The Sector Lockdown Register can be read to determine which sectors in the memory array are permanently locked down.

Stock/Availability for: AT45DB642DCNU

Other algorithms can be used to rewrite portions of the Flash array. Unless otherwise specified tolerance: The information in this document is provided in connection with Atmel products. Master clocks in BYTE a. AC Waveforms Six different timing waveforms are shown below.

All other at45db642f-cnu are the property of their respective owners.


No license, express or implied, by estoppel or otherwise, to any intellectual property right is granted by this at45db642d-dnu or in connection with the sale of Atmel products. Output Test Load All program operations to the DataFlash occur on a page by page basis Fixed tim- ing is not recommended.

For the AT45DBD, the four bits are The decimal value of these four binary bits does not equate to the device density; the four bits represent a combinational code relating to differing densities of DataFlash devices Command Sector Lockdown Figure Since the entire memory array erased, no address bytes need to be clocked into the device, and any data clocked in after the opcode will at45db642x-cnu ignored Page 37 Output Test Load To perform a contin- uous read with the page size set to bytes, the opcode, 03H, must be clocked into the datawheet followed by three address dattasheet A22 – A Low-power applications at45db642d-cju choose to wait until 10, cumulative page erase and program operations have accumulated before rewriting all pages of the sector.


Therefore, the contents of the buffer will be altered from its previous state when this command is issued. Page 31 Table Memory Array To provide optimal flexibility, the memory array of the AT45DBD is divided into three levels of granularity comprising of sectors, blocks, and pages. Main Memory Page Program through Buffer 1 or 2 Copy your embed code and put aat45db642d-cnu your site: The surface finish of the package shall be EDM Charmille The entire main memory can be erased at one time by using the Chip Erase command.

The Block Erase function is not affected by the Chip Erase issue. The user is able to configure these parts to a byte page size if desired. The device operates from a single power supply, 2. Page 53 Packaging Information